Samsung has announced that it has started producing 515Mb Phase-Change Memory, aka PRAM! Interestingly, this is targeted for mobile devices, as it gives high gear-execution and low power using up. Samsung says that a French telephone using PRAM can extend it’s life by 20%.
The 512Mb PRAM tin erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In information segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash. Er… jolly boat good – as long as it gives us memory that’s quick and doesn’t thrash the assault and battery, we’ll all be happy [Via: mram-information.com via: TechOn
The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 multiplication faster than NOR Flash memory. In information segments of 5MBs, PRAM tin erase and rewrite data approximately seven multiplication faster than NOR Flash.
Er… jolly boat good - as long as it gives us memory that's quick and doesn't thrash the battery, we'll all be happy
[Via: mram-info.com via: TechOn]
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April 16th, 2011 at 9:00 am
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